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1 MRF9130LR3 mrf9130lsr3 motorola rf device data the rf sub - micron mosfet line rf power field effect transistors n - channel enhancement - mode lateral mosfets designed for gsm and gsm edge base station applications with frequencies from 921 to 960 mhz, the high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment. ? typical performance for gsm frequencies, 921 to 960 mhz, 28 volts output power @ p1db ? 135 watts power gain ? 16.5 db @ 130 watts output power efficiency ? 48% @ 130 watts output power ? internally matched, controlled q, for ease of use ? high gain, high efficiency and high linearity ? integrated esd protection ? designed for maximum gain and insertion phase flatness ? capable of handling 5:1 vswr, @ 28 vdc, all frequency band, 130 watts cw output power ? excellent thermal stability ? characterized with series equivalent large - signal impedance parameters ? low gold plating thickness on leads, 40 ? nominal. ? in tape and reel. r3 suffix = 250 units per 56 mm, 13 inch reel. maximum ratings rating symbol value unit drain - source voltage v dss 65 vdc gate - source voltage v gs - 0.5, +15 vdc total device dissipation @ t c = 25 c derate above 25 c p d 298 1.7 watts w/ c storage temperature range t stg - 65 to +200 c operating junction temperature t j 200 c thermal characteristics characteristic symbol value unit thermal resistance, junction to case r jc 0.6 c/w esd protection characteristics test conditions class human body model 1 (minimum) machine model m2 (minimum) charge device model c7 (minimum) note - caution - mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. order this document by mrf9130l/d motorola semiconductor technical data MRF9130LR3 mrf9130lsr3 gsm/gsm edge 921 - 960 mhz, 130 w, 28 v lateral n - channel rf power mosfets case 465 - 06, style 1 ni - 780 MRF9130LR3 case 465a - 06, style 1 ni - 780s mrf9130lsr3 ? motorola, inc. 2004 rev 2 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
MRF9130LR3 mrf9130lsr3 2 motorola rf device data electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds = 65 vds, v gs = 0 vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds = 28 vds, v gs = 0 vdc) i dss ? ? 1 adc gate - source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics gate threshold voltage (v ds = 10 vdc, i d = 450 adc) v gs(th) 2 3 4 vdc gate quiescent voltage (v ds = 28 vdc, i d = 1000 madc) v gs(q) ? 3.6 ? vdc drain - source on - voltage (v gs = 10 vdc, i d = 3 adc) v ds(on) ? 0.2 0.4 vdc forward transconductance (v ds = 10 vdc, i d = 9 adc) g fs ? 12 ? s dynamic characteristics (1) output capacitance (v ds = 28 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c oss ? 110 ? pf reverse transfer capacitance (v ds = 28 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss ? 4.4 ? pf functional tests (in motorola test fixture) power output, 1 db compression point (v dd = 28 vdc, i dq = 1000 ma, f = 921 and 960 mhz) p1db 120 135 ? w common - source amplifier power gain (v dd = 28 vdc, p out = 130 w, i dq = 1000 ma, f = 921 and 960 mhz) g ps 15.5 16.5 ? db drain efficiency (v dd = 28 vdc, p out = 130 w, i dq = 1000 ma, f = 921 and 960 mhz) 43 48 ? % input return loss (v dd = 28 vdc, p out = 130 w, i dq = 1000 ma, f = 921 and 960 mhz) irl ? -12 -9 db output mismatch stress (v dd = 28 vdc, p out = 130 w cw, i dq = 1000 ma, f = 921 mhz, vswr = 5:1, all phase angles at frequency of tests) no degradation in output power before and after test (1) part is internally input matched. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
3 MRF9130LR3 mrf9130lsr3 motorola rf device data figure 1. 921 - 960 mhz test circuit schematic c1 + z1 c8 r1 rf input rf output dut v gg c2 r2 c3 r3 v dd c6 c5 c4 + c7 z2 c9 z3 c11 c10 c13 c12 z4 c17 c16 c15 c14 c18 c20 c19 z5 c21 c22 z6 table 1. 921 - 960 mhz test circuit component designations and values designators description c1, c4 10 f, 35 v tantalum capacitors, vishay - sprague #293d106x9035d c2, c5 100 nf chip capacitors (1206), avx #1206c104katda c3, c8, c21, c22 22 pf, 100b chip capacitors, atc #100b220c c6 33 pf, 100b chip capacitor, atc #100b330jw c7 1.0 pf, 100b chip capacitor, atc #100b1r0bw c9 4.7 pf, 100b chip capacitor, atc #100b4r7bw c10 8.2 pf, 100b chip capacitor, atc #100b8r2cw c11 10 pf, 100b chip capacitor, atc #100b100gw c12, c13 12 pf, 100b chip capacitors, atc #100b120gw c14, c15 2.7 pf, 100b chip capacitors, atc #100b2r7bw c16, c17, c18 3.9 pf, 100b chip capacitors, atc #100b3r9bw c19 3.3 pf, 100b chip capacitor, atc #100b3r3bw c20 1.8 pf, 100b chip capacitor, atc #100b1r8bw r1 18 k , 1/8 w chip resistor (1206) r2 10 k , 1/8 w chip resistor (1206) r3 1.0 k , 1/8 w chip resistor (1206) z1 0.117 x 0.600 microstrip z2 0.117 x 1.851 microstrip z3 1.074 x 1.068 microstrip z4 1.074 x 0.980 microstrip z5 0.117 x 1.933 microstrip z6 0.117 x 0.605 microstrip pcb taconic tlx8, 0.030 , r = 2.55 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
MRF9130LR3 mrf9130lsr3 4 motorola rf device data figure 2. 921 - 960 mhz test circuit component layout mrf9130l c1 r1 c2 r2 c3 c7 c8 c9 r3 c10 c11 c12 c13 c14 c15 c16 c17 c18 c19 c20 c21 c22 c6 c5 c4 v bias ground v supply ground f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5 MRF9130LR3 mrf9130lsr3 motorola rf device data typical characteristics figure 3. power gain and input return loss versus frequency figure 4. power gain and efficiency versus output power figure 5. power gain versus output power figure 6. power gain versus output power figure 7. power gain versus output power p out , output power (dbm) , drain efficiency (%) g ps , power gain (db) 100 15 18 1 0 60 g ps v dd = 28 vdc i dq = 1000 ma f = 940 mhz 17.5 50 17 40 16.5 30 16 20 15.5 10 10 1000 p out , output power (watts) g ps , power gain (db) 100 15 18 i dq = 1200 ma v dd = 28 vdc f = 940 mhz 17 16 14 10 1 800 ma 1000 ma 600 ma 1000 p out , output power (watts) g ps , power gain (db) 100 15 18 v dd = 24 v i dq = 1000 ma f = 940 mhz 17 16 13 10 1 1000 14 26 v 28 v 30 v p out , output power (watts) g ps , power gain (db) 100 15 18 t c = ?20 c v dd = 28 vdc i dq = 1000 ma f = 940 mhz 17 16 14 10 1 1000 25 c 50 c 85 c f, frequency (mhz) irl, input return loss (db) g ps , power gain (db) 940 13 900 ?25 g ps v dd = 28 vdc i dq = 1000 ma 18 0 17 ?5 16 ?10 15 ?15 14 ?20 920 1000 960 980 irl 60 w 130 w 130 w p out = 60 w f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
MRF9130LR3 mrf9130lsr3 6 motorola rf device data typical characteristics figure 8. evm and efficiency versus output power figure 9. spectral regrowth versus output power p out , output power (watts) avg. spectral regrowth (dbc) 100 ?75 ?60 v dd = 28 vdc i dq = 800 ma f = 960 mhz ?65 ?70 ?85 10 1 ?80 @ 400 khz @ 600 khz ?50 ?55 note: curves on figure 8 and 9 gathered on a gsm edge optimized text fixture. p out , output power (watts) avg. evm (%) 100 4 10 v dd = 28 vdc i dq = 800 ma f = 960 mhz 8 6 0 10 1 2 evm 20 50 40 30 0 10 , drain efficiency (%) f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
7 MRF9130LR3 mrf9130lsr3 motorola rf device data figure 10. series equivalent input and output impedance f mhz z source ? z load ? 880 920 960 0.63 - j1.66 0.82 - j2.18 0.67 - j1.88 0.82 - j0.36 0.72 - j0.30 0.74 - j0.37 v dd = 28 vdc, i dq = 1000 ma, p out = 130 w cw 1000 0.86 - j2.56 0.69 - j0.79 z o = 5 ? f = 1000 mhz f = 880 mhz f = 1000 mhz f = 880 mhz z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. z source z load input matching network device under test output matching network z load z source f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
MRF9130LR3 mrf9130lsr3 8 motorola rf device data notes f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
9 MRF9130LR3 mrf9130lsr3 motorola rf device data notes f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
MRF9130LR3 mrf9130lsr3 10 motorola rf device data notes f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
11 MRF9130LR3 mrf9130lsr3 motorola rf device data package dimensions ni - 780 case 465 - 06 issue f notes: 1. dimensioning and tolerancing per ansi y14.5m?1994. 2. controlling dimension: inch. 3. deleted 4. dimension h is measured 0.030 (0.762) away from package body. dim min max min max millimeters inches a 1.335 1.345 33.91 34.16 b 0.380 0.390 9.65 9.91 c 0.125 0.170 3.18 4.32 d 0.495 0.505 12.57 12.83 e 0.035 0.045 0.89 1.14 f 0.003 0.006 0.08 0.15 g 1.100 bsc 27.94 bsc h 0.057 0.067 1.45 1.70 k 0.170 0.210 4.32 5.33 n 0.772 0.788 19.60 20.00 q .118 .138 3.00 3.51 r 0.365 0.375 9.27 9.53 style 1: pin 1. drain 2. gate 3. source 1 3 2 d g k c e h s f s 0.365 0.375 9.27 9.52 m 0.774 0.786 19.66 19.96 aaa 0.005 ref 0.127 ref bbb 0.010 ref 0.254 ref ccc 0.015 ref 0.381 ref q 2x m a m bbb b m t m a m bbb b m t b b (flange) seating plane m a m ccc b m t m a m bbb b m t aa (flange) t n (lid) m (insulator) m a m aaa b m t (insulator) r m a m ccc b m t (lid) MRF9130LR3 ni - 780s mrf9130lsr3 case 465a - 06 issue f notes: 1. dimensioning and tolerancing per ansi y14.5m?1994. 2. controlling dimension: inch. 3. deleted 4. dimension h is measured 0.030 (0.762) away from package body. dim min max min max millimeters inches a 0.805 0.815 20.45 20.70 b 0.380 0.390 9.65 9.91 c 0.125 0.170 3.18 4.32 d 0.495 0.505 12.57 12.83 e 0.035 0.045 0.89 1.14 f 0.003 0.006 0.08 0.15 h 0.057 0.067 1.45 1.70 k 0.170 0.210 4.32 5.33 m 0.774 0.786 19.61 20.02 r 0.365 0.375 9.27 9.53 style 1: pin 1. drain 2. gate 5. source 1 2 d k c e h f 3 u (flange) 4x z (lid) 4x bbb 0.010 ref 0.254 ref ccc 0.015 ref 0.381 ref aaa 0.005 ref 0.127 ref s 0.365 0.375 9.27 9.52 n 0.772 0.788 19.61 20.02 u ??? 0.040 ??? 1.02 z ??? 0.030 ??? 0.76 m a m bbb b m t b b (flange) 2x seating plane m a m ccc b m t m a m bbb b m t a a (flange) t n (lid) m (insulator) m a m ccc b m t m a m aaa b m t r (lid) s (insulator) f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
MRF9130LR3 mrf9130lsr3 12 motorola rf device data information in this document is provided solely to enable system and software implementers to use motorola products. there are no express or i mplied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in th is document. motorola reserves the right to make changes without further notice to any products herein. motorola makes no warranty, represen tation or guarantee regarding the suitability of its products for any particular purpose, nor does motorola assume any liability arising out of the applicati on or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?t ypical? parameters that may be provided in motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all oper ating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. motorola does not convey any license under its patent rights nor the rights of others. motorola products are not designed, intended, or authorized for use as components in systems intended for surgical impl ant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the motorola product could create a s ituation where personal injury or death may occur. should buyer purchase or use motorola products for any such unintended or unauthorized application, buyer s hall indemnify and hold motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expens es, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that motorola was negligent regarding the design or manufacture of the part. motorola and the stylized m logo are registered in the us patent and t rademark office. all other product or service names are the proper ty of their respective owners. motorola, inc. is an equal opportunity/affirmative action employer. motorola inc. 2004 how to reach us: usa / europe / locations not listed : japan : motorola japan ltd.; sps, technical information center, motorola literature distribution 3 - 20 - 1, minami - azabu, minato - ku, tokyo 106 - 8573, japan p.o. box 5405, denver, colorado 80217 81-3- 3440 - 3569 1 - 800 - 521 - 6274 or 480 - 768 - 2130 asia / pacific : motorola semiconductors h.k. ltd.; silicon harbour centre, 2 dai king street, tai po industria l estate, tai po, n.t., hong kong 852 - 26668334 home page : http://motorola.com/semiconductors mrf9130l/d ? f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .

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